magnetron sputtered silicon dioxide (SiO₂) films and silicon dioxide/silicon nitride/silicon dioxide (SiO₂/Si₃N₄/SiO₂, abbreviated as ONO) films

1. Research Background and Significance

Magnetron sputtering is a widely used technique for thin-film deposition, known for its high uniformity, controllable process, and suitability for large-scale production. It is extensively applied to fabricate silicon dioxide (SiO₂) and ONO films. These films serve as insulating layers in microelectronic devices, and their insulating properties directly affect the stability and reliability of the devices.

2. Insulating Properties of Magnetron Sputtered Silicon Dioxide Films

Preparation and Characterization: Silicon dioxide films are prepared using medium-frequency magnetron sputtering. The insulating properties are evaluated by measuring the electrical resistance with a megohmmeter. The structure and composition of the films are characterized using X-ray diffraction (XRD) and Fourier-transform infrared spectroscopy (FTIR).
Insulating Properties: Studies have shown that the sputtered product is amorphous SiOₓ, which exhibits excellent insulating properties with high resistivity, making it suitable for use as an insulating layer in microelectronic devices.

3. Insulating Properties of ONO Films

Structure and Preparation: ONO films consist of a three-layer structure of silicon dioxide (SiO₂), silicon nitride (Si₃N₄), and silicon dioxide (SiO₂). These films are typically deposited layer-by-layer using magnetron sputtering.
Advantages in Insulating Properties: This multi-layer structure combines the advantages of SiO₂ and Si₃N₄, offering high dielectric strength and good thermal stability. The Si₃N₄ layer effectively suppresses charge trapping, while the SiO₂ layers provide good chemical stability and interface characteristics.
Application Prospects: As an insulating layer in microelectronic devices, ONO films can significantly enhance the performance and reliability of the devices.

4. Factors Affecting Insulating Properties

Sputtering Parameters: Sputtering time, power, and gas flow have significant impacts on the structure and insulating properties of the films. For example, prolonged sputtering can lead to defects on the target surface, which in turn affect the uniformity and insulating properties of the films.
Target Material Quality: The composition and quality of the target material directly influence the performance of the films. High-quality targets can produce more uniform films, thereby improving insulating properties.

5. Future Research Directions

Future research may focus on:

Optimizing Sputtering Processes: By precisely controlling sputtering parameters, further improvements in the insulating properties of the films can be achieved.
Developing New Materials: Exploring other insulating materials or composite structures to meet the higher performance requirements of microelectronic devices.

Conclusion

In summary, silicon dioxide and ONO films prepared by magnetron sputtering exhibit excellent insulating properties and hold broad application prospects.