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Ion Source Electron Beam Evaporation Coater System for La2O3 Lanthanum Oxide Thin FilmIon Source Electron Beam Evaporation Coater System for La2O3 Lanthanum Oxide Thin FilmIon Source Electron Beam Evaporation Coater System for La2O3 Lanthanum Oxide Thin FilmIon Source Electron Beam Evaporation Coater System for La2O3 Lanthanum Oxide Thin Film

Ion Source Electron Beam Evaporation Coater System for La2O3 Lanthanum Oxide Thin Film

    Electron beam evaporation is a type of physical vapor deposition (PVD) technology commonly used to deposit thin film materials onto substrates. The basic principle involves using a high-energy electron beam to heat and evaporate the target material (usually metal or insulator), allowing its atoms or molecules to diffuse onto the substrate in vapor form and form a thin film

Electron beam evaporation is a type of physical vapor deposition (PVD) technology commonly used to deposit thin film materials onto substrates. The basic principle involves using a high-energy electron beam to heat and evaporate the target material (usually metal or insulator), allowing its atoms or molecules to diffuse onto the substrate in vapor form and form a thin film. 

Product Overview:

In ion-assisted electron beam evaporation, a beam of ions (usually argon) with a broad energy range is directed towards the substrate, arriving together with the material to be deposited. These ions transfer energy to the evaporated atoms, enhancing surface mobility. The increased arriving energy and surface mobility improve the adhesion, density, and grain structure of the deposited film. 

Product Features:

High Purity: The evaporation process occurs under high vacuum, resulting in films with high purity.

High Deposition Rate: Electron beam evaporation can achieve high deposition rates, suitable for rapid thick film preparation.

Wide Material Compatibility: Applicable to metals, insulators, and some high melting point materials that are difficult to evaporate.

Modular Design: Facilitates maintenance and upgrades, with customizable functional modules according to needs.

Environmentally Friendly: Low energy consumption design reduces environmental impact. 

Purchase Information:

If you are interested in our ion source electron beam evaporation coating system, please contact us for more information and a quotation.

Phone: +86 18516380382

Email: Jimmy@cysitech.com

Contact Person: Jimmy Hao

WeChat: +86 18516380382 

Technical Specifications: 

Parameter Name

Description

Product Name

Ion   Source Electron Beam Evaporation Coater/Coating System

Product Model

CY-EVP500-EB

Operating   Conditions

Ambient   Temperature

5℃~40℃

Power   Supply

380V

Power

≤20KW

Water   Pressure

≤2.5bar

Vacuum Chamber

Chamber   Material:

Made   of 304 stainless steel with polished surface

Loading/Unloading   Mode

Front   door design for easy sample and material access

Observation   Window

Front   window with magnetic shield to prevent contamination

Water   Cooling

Customizable

Sample Stage

Sample   Size

Accommodates flat   samples with diameters ≤150mm (customizable for other sizes and shapes)

Rotation   Speed:

Adjustable   from 0 to 20 rpm

Heating   Temperature

Options   available for RT-500℃, RT-800℃, and RT-1000℃

Cooling

Customizable   water cooling

Lifting

Lifting: Adjustable   distance between sample stage and evaporation source (manual/electric options   available)

Transfer Chamber

Customizable   according to customer requirements

Electron Gun

E-type   electron gun with six-pocket crucible

Ion Source

Kaufman   ion source

System Vacuum   Level

 

Ultimate   Vacuum

After 12-24 hours   of baking, continuous pumping achieves ≤5x10-5Pa.

Pumping   Speed

Achieves   ≤5x10-4Pa within 40 minutes from atmospheric pressure

System   Leak Rate

Overall leak rate   ≤1×10-8Pa.L/s, with vacuum level ≤10Pa after 12 hours of pump shutdown

Vacuum Pumping   System

600L/S   molecular pump system with bypass pumping

Film Thickness   Monitoring System

Quartz   crystal film thickness monitor

Coating Thickness   Uniformity

≤3%


Major Components:

Component Name

Description

Main Equipment   Host

Loads/unloads   samples, sets coating process parameters, and controls the entire coating   process.

Ion Source

Enhances   coating effects.

Molecular Pump

Provides   vacuum for the equipment.

Film Thickness   Monitoring System

Monitors   thin film thickness in real-time.

Test Materials

Testing   available according to customer requirements.

Standard   Accessories

Includes   seals, quick gas connectors, and quartz crystal sensors

User Manual

Yes

 Application Fields:

Semiconductor Manufacturing: Used for various thin films in integrated circuits, such as metallization and dielectric layers.

Optical Films: Production of thin films for optical devices such as anti-reflective coatings, mirrors, and filters.

Solar Cells: Deposits absorber layers and electrode materials to improve solar cell efficiency.

Decorative Coatings: Applied to products like watches and jewelry to enhance appearance and wear resistance.

Hard Coatings: Used on tools and molds to enhance wear resistance and extend service life.

Biomedical Devices: Coats biocompatible films such as titanium or gold on medical implants and devices.

Data Storage: Applies magnetic films for disks and other data storage media. 

Application Example: Deposition of La2O3 (Lanthanum Oxide) Film on Silicon Wafer Using Ion Source Electron Beam Coating System 

Required Equipment and Materials:

Electron Beam Evaporation System: Equipped with an ion source to improve film adhesion and quality.

La2O3 Target Material: High-purity lanthanum oxide.

Silicon Wafer: Used as a substrate.

Vacuum System: Creates a low-pressure environment.

Temperature Control System: Regulates substrate temperature.

Monitoring and Control Equipment: Such as a quartz crystal microbalance to monitor film thickness.

Steps:

1. Preparation:

Clean the silicon wafer to remove surface contaminants and ensure uniform film deposition.

Place the La2O3 target material in the crucible of the electron beam evaporation system.

 2. Vacuum Environment:

Start the vacuum system to reduce chamber pressure to approximately 10⁻⁶ Torr, minimizing oxidation and impurities. 

3. Substrate Heating:

Heat the silicon wafer to the appropriate temperature (usually 200-300°C) to improve film adhesion and quality. 

4. Ion Source Activation:

Activate the ion source for substrate pre-treatment to enhance film adhesion. 

5. Electron Beam Evaporation:

Open the electron beam and start heating the La2O3 target material to its evaporation temperature.

The evaporated La2O3 molecules deposit onto the silicon wafer, forming a thin film. 

6. Thickness Monitoring:

Use a quartz crystal to monitor deposition rate and thickness to ensure specifications are met. 

7. Deposition Completion:

Turn off the electron beam and ion source upon reaching the desired thickness.

Allow the silicon wafer to cool to room temperature and gradually return the chamber to atmospheric pressure. 

8. Post-Processing:

Perform annealing if necessary to improve the structure and performance of the film. 

Precautions:

Substrate Surface Cleanliness: Ensure no contaminants on the silicon wafer surface for high-quality films.

Ion Source Usage: Enhances film density and adhesion but requires adjusting ion energy and flow based on material characteristics.

Environmental Control: Maintain cleanliness and sealing of the vacuum system to prevent impurities from affecting film quality. 

Here are some common issues and precautions for using ion source electron beam systems: 

Common Issues:

1. Target Material Contamination:

Cause: Contaminants can arise from improper handling or insufficient vacuum conditions.

Solution: Ensure that all components are thoroughly cleaned and the vacuum system is properly maintained to minimize contaminants. 

2. Arc Discharge:

Cause: Occurs due to the accumulation of charge on insulating materials.

Solution: Implement fast arc suppression features and ensure proper grounding to prevent charge buildup. 

3. Non-Uniform Film Thickness:

Cause: Can be caused by improper substrate positioning or uneven evaporation.

Solution: Calibrate the system regularly and use rotation or oscillation of the substrate to ensure even coating. 

4. Low Deposition Rate:

Cause: Could be due to incorrect electron beam alignment or low power settings.

Solution: Adjust the beam alignment and increase power settings according to the material’s evaporation characteristics. 

5. Poor Adhesion of Films:

Cause: Inadequate substrate preparation or incorrect process parameters.

Solution: Thoroughly clean and prepare the substrate and optimize parameters such as temperature and ion source settings. 

6. Excessive Heating of Substrate:

Cause: High power settings or prolonged exposure to the electron beam.

Solution: Use appropriate cooling mechanisms and monitor substrate temperature closely. 

Precautions:

1. Safety Measures:

Always wear protective gear and follow safety protocols when operating the system. High voltage and vacuum conditions can pose hazards. 

2. Vacuum Maintenance:

Regularly check and maintain the vacuum system to ensure it is free of leaks and contaminants. 

3. Calibration and Setup:

Calibrate the system regularly to ensure accurate deposition. Proper setup of parameters is crucial for achieving desired film properties. 

4. Handling of Materials:

Handle target materials and substrates with care to avoid contamination. Use gloves and clean tools when loading materials. 

6. Monitoring and Control:

Continuously monitor deposition parameters such as pressure, temperature, and deposition rate. Use automatic control systems to maintain stability. 

7. Regular Maintenance:

Perform routine maintenance on all components of the system, including electron guns, power supplies, and cooling systems, to ensure optimal performance. 


Contact Us
  • E-mail: cysi@cysi.wang
  • Tel: +86 371 5519 9322
  • Fax: +86 371 8603 6875
  • Add: No. 820, 8th Floor, 1st Unit, 9th Block, Cuizhu Street, High-Tech Zone, Zhengzhou, Henan, China




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