Electron beam evaporation is a type of physical vapor deposition (PVD) technology commonly used to deposit thin film materials onto substrates. The basic principle involves using a high-energy electron beam to heat and evaporate the target material (usually metal or insulator), allowing its atoms or molecules to diffuse onto the substrate in vapor form and form a thin film
Electron beam evaporation is a type of physical vapor deposition (PVD) technology commonly used to deposit thin film materials onto substrates. The basic principle involves using a high-energy electron beam to heat and evaporate the target material (usually metal or insulator), allowing its atoms or molecules to diffuse onto the substrate in vapor form and form a thin film.
Product Overview:
In ion-assisted electron beam evaporation, a beam of ions (usually argon) with a broad energy range is directed towards the substrate, arriving together with the material to be deposited. These ions transfer energy to the evaporated atoms, enhancing surface mobility. The increased arriving energy and surface mobility improve the adhesion, density, and grain structure of the deposited film.
Product Features:
High Purity: The evaporation process occurs under high vacuum, resulting in films with high purity.
High Deposition Rate: Electron beam evaporation can achieve high deposition rates, suitable for rapid thick film preparation.
Wide Material Compatibility: Applicable to metals, insulators, and some high melting point materials that are difficult to evaporate.
Modular Design: Facilitates maintenance and upgrades, with customizable functional modules according to needs.
Environmentally Friendly: Low energy consumption design reduces environmental impact.
Purchase Information:
If you are interested in our ion source electron beam evaporation coating system, please contact us for more information and a quotation.
Phone: +86 18516380382
Email: Jimmy@cysitech.com
Contact Person: Jimmy Hao
WeChat: +86 18516380382
Technical Specifications:
Parameter Name | Description | |
Product Name | Ion Source Electron Beam Evaporation Coater/Coating System | |
Product Model | CY-EVP500-EB | |
Operating Conditions | Ambient Temperature | 5℃~40℃ |
Power Supply | 380V | |
Power | ≤20KW | |
Water Pressure | ≤2.5bar | |
Vacuum Chamber | Chamber Material: | Made of 304 stainless steel with polished surface |
Loading/Unloading Mode | Front door design for easy sample and material access | |
Observation Window | Front window with magnetic shield to prevent contamination | |
Water Cooling | Customizable | |
Sample Stage | Sample Size | Accommodates flat samples with diameters ≤150mm (customizable for other sizes and shapes) |
Rotation Speed: | Adjustable from 0 to 20 rpm | |
Heating Temperature | Options available for RT-500℃, RT-800℃, and RT-1000℃ | |
Cooling | Customizable water cooling | |
Lifting | Lifting: Adjustable distance between sample stage and evaporation source (manual/electric options available) | |
Transfer Chamber | Customizable according to customer requirements | |
Electron Gun | E-type electron gun with six-pocket crucible | |
Ion Source | Kaufman ion source | |
System Vacuum Level
| Ultimate Vacuum | After 12-24 hours of baking, continuous pumping achieves ≤5x10-5Pa. |
Pumping Speed | Achieves ≤5x10-4Pa within 40 minutes from atmospheric pressure | |
System Leak Rate | Overall leak rate ≤1×10-8Pa.L/s, with vacuum level ≤10Pa after 12 hours of pump shutdown | |
Vacuum Pumping System | 600L/S molecular pump system with bypass pumping | |
Film Thickness Monitoring System | Quartz crystal film thickness monitor | |
Coating Thickness Uniformity | ≤3% |
Major Components:
Component Name | Description |
Main Equipment Host | Loads/unloads samples, sets coating process parameters, and controls the entire coating process. |
Ion Source | Enhances coating effects. |
Molecular Pump | Provides vacuum for the equipment. |
Film Thickness Monitoring System | Monitors thin film thickness in real-time. |
Test Materials | Testing available according to customer requirements. |
Standard Accessories | Includes seals, quick gas connectors, and quartz crystal sensors |
User Manual | Yes |
Application Fields:
Semiconductor Manufacturing: Used for various thin films in integrated circuits, such as metallization and dielectric layers.
Optical Films: Production of thin films for optical devices such as anti-reflective coatings, mirrors, and filters.
Solar Cells: Deposits absorber layers and electrode materials to improve solar cell efficiency.
Decorative Coatings: Applied to products like watches and jewelry to enhance appearance and wear resistance.
Hard Coatings: Used on tools and molds to enhance wear resistance and extend service life.
Biomedical Devices: Coats biocompatible films such as titanium or gold on medical implants and devices.
Data Storage: Applies magnetic films for disks and other data storage media.
Application Example: Deposition of La2O3 (Lanthanum Oxide) Film on Silicon Wafer Using Ion Source Electron Beam Coating System
Required Equipment and Materials:
Electron Beam Evaporation System: Equipped with an ion source to improve film adhesion and quality.
La2O3 Target Material: High-purity lanthanum oxide.
Silicon Wafer: Used as a substrate.
Vacuum System: Creates a low-pressure environment.
Temperature Control System: Regulates substrate temperature.
Monitoring and Control Equipment: Such as a quartz crystal microbalance to monitor film thickness.
Steps:
1. Preparation:
Clean the silicon wafer to remove surface contaminants and ensure uniform film deposition.
Place the La2O3 target material in the crucible of the electron beam evaporation system.
2. Vacuum Environment:
Start the vacuum system to reduce chamber pressure to approximately 10⁻⁶ Torr, minimizing oxidation and impurities.
3. Substrate Heating:
Heat the silicon wafer to the appropriate temperature (usually 200-300°C) to improve film adhesion and quality.
4. Ion Source Activation:
Activate the ion source for substrate pre-treatment to enhance film adhesion.
5. Electron Beam Evaporation:
Open the electron beam and start heating the La2O3 target material to its evaporation temperature.
The evaporated La2O3 molecules deposit onto the silicon wafer, forming a thin film.
6. Thickness Monitoring:
Use a quartz crystal to monitor deposition rate and thickness to ensure specifications are met.
7. Deposition Completion:
Turn off the electron beam and ion source upon reaching the desired thickness.
Allow the silicon wafer to cool to room temperature and gradually return the chamber to atmospheric pressure.
8. Post-Processing:
Perform annealing if necessary to improve the structure and performance of the film.
Precautions:
Substrate Surface Cleanliness: Ensure no contaminants on the silicon wafer surface for high-quality films.
Ion Source Usage: Enhances film density and adhesion but requires adjusting ion energy and flow based on material characteristics.
Environmental Control: Maintain cleanliness and sealing of the vacuum system to prevent impurities from affecting film quality.
Here are some common issues and precautions for using ion source electron beam systems:
Common Issues:
1. Target Material Contamination:
Cause: Contaminants can arise from improper handling or insufficient vacuum conditions.
Solution: Ensure that all components are thoroughly cleaned and the vacuum system is properly maintained to minimize contaminants.
2. Arc Discharge:
Cause: Occurs due to the accumulation of charge on insulating materials.
Solution: Implement fast arc suppression features and ensure proper grounding to prevent charge buildup.
3. Non-Uniform Film Thickness:
Cause: Can be caused by improper substrate positioning or uneven evaporation.
Solution: Calibrate the system regularly and use rotation or oscillation of the substrate to ensure even coating.
4. Low Deposition Rate:
Cause: Could be due to incorrect electron beam alignment or low power settings.
Solution: Adjust the beam alignment and increase power settings according to the material’s evaporation characteristics.
5. Poor Adhesion of Films:
Cause: Inadequate substrate preparation or incorrect process parameters.
Solution: Thoroughly clean and prepare the substrate and optimize parameters such as temperature and ion source settings.
6. Excessive Heating of Substrate:
Cause: High power settings or prolonged exposure to the electron beam.
Solution: Use appropriate cooling mechanisms and monitor substrate temperature closely.
Precautions:
1. Safety Measures:
Always wear protective gear and follow safety protocols when operating the system. High voltage and vacuum conditions can pose hazards.
2. Vacuum Maintenance:
Regularly check and maintain the vacuum system to ensure it is free of leaks and contaminants.
3. Calibration and Setup:
Calibrate the system regularly to ensure accurate deposition. Proper setup of parameters is crucial for achieving desired film properties.
4. Handling of Materials:
Handle target materials and substrates with care to avoid contamination. Use gloves and clean tools when loading materials.
6. Monitoring and Control:
Continuously monitor deposition parameters such as pressure, temperature, and deposition rate. Use automatic control systems to maintain stability.
7. Regular Maintenance:
Perform routine maintenance on all components of the system, including electron guns, power supplies, and cooling systems, to ensure optimal performance.
Copyright © Zhengzhou CY Scientific Instrument Co., Ltd. All Rights Reserved Update cookies preferences
| Sitemap | Technical Support: