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Bridgman Crystal growing furnace at 1650 ℃Bridgman Crystal growing furnace at 1650 ℃Bridgman Crystal growing furnace at 1650 ℃

Bridgman Crystal growing furnace at 1650 ℃

    1650℃ Bridgman crystal growth furnace is mainly used in the field of  semiconductor materials, for the growth of a variety of single crystals, including silicon, sapphire, silicon nitride, silicon carbide, etc. It  can grow high purity, high quality and large size single crystals for  the  production  of  semiconductor  devices,  lasers,  optoelectronic  devices, etc. In addition, the furnace can also be used to grow  photovoltaic materials, magnetic materials, ferroelectric materials,  etc.


1650℃ Bridgman Crystal growth furnace is a high temperature crystal growth equipment, mainly used to grow high quality, large size single crystals. Its technical features are as follows:

1. High temperature capacity: 1650℃ Bridgman crystal growth furnace can reach very high working temperature, can meet many high temperature crystal growth needs.

2. High precision temperature control: The furnace adopts advanced temperature control technology, which can achieve high precision temperature control and ensure the quality and reliability of crystal preparation.

3. Reasonable equipment  structure: the furnace  has a reasonable structure design, to ensure the uniformity and stability of crystal growth.

4. Simple operation: the operation of the furnace is very simple, can easily carry out process operation and parameter control.

5 High efficiency and energy saving: energy saving materials are used inside the furnace, which makes the heating efficiency high and the energy utilization rate high.

6. Safe and reliable: the equipment adopts high quality materials and advanced safety technology to ensure the safety of user operation and high reliability of equipment.

 Bridgman crystal growth furnace Application fields:

 1650℃ Bridgman crystal growth furnace is mainly used in the field of  semiconductor materials, for the growth of a variety of single crystals, including silicon, sapphire, silicon nitride, silicon carbide, etc. It  can grow high purity, high quality and large size single crystals for  the  production  of  semiconductor  devices,  lasers,  optoelectronic  devices, etc. In addition, the furnace can also be used to grow  photovoltaic materials, magnetic materials, ferroelectric materials,  etc.

Technical parameters of Bridgman crystal growth furnace:

Product name

1650   Bridgman Single Crystal Growing furnace

Product model

CYKY-BG1650

Power supply

Maximum power: 15KW

Operating temperature

Maximum operating temperature: 1650 (<1 hour)

Continuous operating temperature: 1600

Heating element

Silicon molybdenum rod

Furnace

High purity alumina furnace tube, its size is 80   ×1700mm

Tube & flange

Equipped with a set of stainless steel sealing   flanges, allowing crystal growth in a vacuum or atmosphere protected   environment

Sample stand

A Φ60 x 100mm alumina sample stand

Type B thermocouple is inserted into the bottom of   the sample table to measure crucible temperature in real time

Crucible loading

Automatic   sample      table   lifting   for      easy   crucible

placement/sampling

Maximum stroke 700mm

Heating area

Three temperature zone furnace body, forming a   large temperature gradient (each temperature zone length 100mm, total   temperature zone 300mm)

Temperature   control system

PID temperature control, can be set up 30 rising   and cooling procedures

With super mild break protection

Three type B thermocouples

Furnace body moving stroke   & speed

The maximum moving stroke of furnace body is 500mm

Moving speed: 0.03~3mm/ hour

Vacuum pump

Bipolar rotary vane vacuum pump 1.1L/S

Power supply

220V 50HZ

Remarks

Comes with a 10L water cooler



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